An in-situ hard mask block copolymer approach for the fabrication of ordered, large scale, horizontally aligned, Si nanowire arrays on Si substrate

Tandra Ghoshal; Ramsankar Senthamaraikannan; Matthew T. Shaw; Justin D. Holmes; Michael A. Morris

doi:10.1117/12.2045754

27 March 2014 An in-situ hard mask block copolymer approach for the fabrication of ordered, large scale, horizontally aligned, Si nanowire arrays on Si substrate

Tandra Ghoshal, Ramsankar Senthamaraikannan, Matthew T. Shaw, Justin D. Holmes, Michael A. Morris

Author Affiliations +

Proceedings Volume 9051, Advances in Patterning Materials and Processes XXXI; 90510J (2014) https://doi.org/10.1117/12.2045754
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

We report a simple technique to fabricate horizontal, uniform Si nanowire arrays with controlled orientation and density at spatially well defined locations on substrate based on insitu hard mask pattern formation approach by microphase separated polystyrene-b-poly(ethylene oxide) (PS-b-PEO) block copolymer (BCP) thin films. The methodology may be applicable to large scale production. Ordered microphase separated patterns of the BCP were defined by solvent annealing and the orientation was controlled by film thickness and annealing time. Films of PEO cylinders with parallel orientation (to the surface plane) were applied to create ‘frames’ for the generation of inorganic oxide nanowire arrays. These PEO cylinders were subject to selective metal ion inclusion and subsequent processing was used to create iron oxide nanowire arrays. The oxide nanowires were isolated, of uniform diameter and their structure a mimic of the original BCP nanopatterns. The phase purity, crystallinity and thermal stability of the nanowires coupled to the ease of large scale production may make them useful in technological applications. Here, we demonstrate that the oxide nanowire arrays could be used as a resist mask to fabricate densely packed, identical ordered, good fidelity silicon nanowire arrays on the substrate. The techniques may have significant application in the manufacture of transistor circuitry.

Citation Download Citation

Tandra Ghoshal, Ramsankar Senthamaraikannan, Matthew T. Shaw, Justin D. Holmes, and Michael A. Morris "An in-situ hard mask block copolymer approach for the fabrication of ordered, large scale, horizontally aligned, Si nanowire arrays on Si substrate", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90510J (27 March 2014); https://doi.org/10.1117/12.2045754

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Nanowires

Silicon

Oxides

Iron

Etching

Annealing

Transmission electron microscopy

Show All Keywords

Keywords/Phrases

Search In:

Publication Years