Induced strain in silicon waveguides and couplers

G. B. Montanari; F. Mancarella; R. Balboni; D. Marini; F. Corticelli; M. Sanmartin; M. Ferri; G. Bolognini

doi:10.1117/12.2078383

27 February 2015 Induced strain in silicon waveguides and couplers

G. B. Montanari, F. Mancarella, R. Balboni, D. Marini, F. Corticelli, M. Sanmartin, M. Ferri, G. Bolognini

Proceedings Volume 9367, Silicon Photonics X; 93671L (2015) https://doi.org/10.1117/12.2078383
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

In this work we report the results of both theoretical and experimental strain analysis of Silicon waveguides and couplers. Simulations of induced stress and strain distributions on photonic structures (waveguides with 450 × 220 nm cross section) have been performed taking into account a ~375 nm thick Si₃N₄ straining layer. The Convergent Beam Electron Diffraction (CBED) technique has also been employed to provide locally accurate strain measurements on fabricated silicon rib and coupling structures across the nitride-to-silicon interface, showing a good match between multiphysics simulations and measurements along the rib cross-section, resulting in notable attained strain levels.

Citation Download Citation

G. B. Montanari, F. Mancarella, R. Balboni, D. Marini, F. Corticelli, M. Sanmartin, M. Ferri, and G. Bolognini "Induced strain in silicon waveguides and couplers", Proc. SPIE 9367, Silicon Photonics X, 93671L (27 February 2015); https://doi.org/10.1117/12.2078383

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