Analysis of EUV resist outgassing depended on the dosage

E. Shiobara; I. Takagi; Y. Kikuchi; T. Sasami; S. Minegishi; T. Fujimori; T. Watanabe; T. Harada; H. Kinoshita; S. Inoue

doi:10.1117/12.2085692

13 March 2015 Analysis of EUV resist outgassing depended on the dosage

E. Shiobara, I. Takagi, Y. Kikuchi, T. Sasami, S. Minegishi, T. Fujimori, T. Watanabe, T. Harada, H. Kinoshita, S. Inoue

Author Affiliations +

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 942210 (2015) https://doi.org/10.1117/12.2085692
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

The suppression of extreme ultraviolet (EUV) photoresist-related outgassing is one of the challenges in high-volume manufacturing with EUV lithography (EUVL), because it contributes to the contamination of the EUV scanner mirror optics, resulting in reflectivity loss. Witness sample pragmatic outgas qualification has been developed into the general method for clarifying commercially available, chemically amplified resists. Preliminary results have suggested a linear correlation between contamination thickness in the electron-beam-based and the EUV-based evaluation systems. In fact, a positive relationship was observed between contamination thickness and exposure dose. However, recent experiments indicate that in some resists, this relationship is not linear. In the present study, a resist outgas model is proposed and tested to investigate the contamination thickness’ dependency on exposure dose. The model successfully explains the experimental outgas phenomenon. It is estimated that increasing exposure dose, in resists with low activation energies (Ea) in deprotection reactions, results in extreme increase in contamination thickness. Furthermore, the low-Ea resists have high contamination risk when exposure is extensive.

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E. Shiobara, I. Takagi, Y. Kikuchi, T. Sasami, S. Minegishi, T. Fujimori, T. Watanabe, T. Harada, H. Kinoshita, and S. Inoue "Analysis of EUV resist outgassing depended on the dosage", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942210 (13 March 2015); https://doi.org/10.1117/12.2085692

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