Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

Shiwei Xue; Jintong Xu; Xiangyang Li

doi:10.1117/12.2180105

13 April 2015 Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

Shiwei Xue, Jintong Xu, Xiangyang Li

Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 95221N (2015) https://doi.org/10.1117/12.2180105
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

Citation Download Citation

Shiwei Xue, Jintong Xu, and Xiangyang Li "Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95221N (13 April 2015); https://doi.org/10.1117/12.2180105

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KEYWORDS

Polarization

Gallium nitride

Sensors

PIN photodiodes

Aluminum

Aluminum nitride

Device simulation

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