Investigation of (SiC)0.85-Sb3Te alloy for high-reliability PCM applications

Tianqi Guo; Sannian Song; Le Li; Lanlan Shen; Bo Liu; Zhitang Song; Ming Qi; Songlin Feng

doi:10.1117/12.2246984

12 October 2016 Investigation of (SiC)_0.85-Sb₃Te alloy for high-reliability PCM applications

Tianqi Guo, Sannian Song, Le Li, Lanlan Shen, Bo Liu, Zhitang Song, Ming Qi, Songlin Feng

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180U (2016) https://doi.org/10.1117/12.2246984
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

The reliability and operation speed have long been two great obstacles in phase change memory technology. Thus (SiC)_0.85-Sb₃Te alloy was proposed to be a new-type phase change material due to its high crystallization temperature (199.7°C) and good data retention ability (118.9°C for 10-year archival life) in this work. The stress accompanying the phase transition in (SiC)_0.85-Sb₃Te is smaller than those in pure Sb₃Te and the traditional material, Ge₂Sb₂Te₅. This is attributed to the fine crystal grain size due to SiC doping, which contributes to the ultrafast reversible operation (5 ns) and good endurance (2.3 × 10⁴ cycles) of (SiC)_0.85-Sb₃Te based phase change memory cells.

Citation Download Citation

Tianqi Guo, Sannian Song, Le Li, Lanlan Shen, Bo Liu, Zhitang Song, Ming Qi, and Songlin Feng "Investigation of (SiC)_0.85-Sb₃Te alloy for high-reliability PCM applications", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180U (12 October 2016); https://doi.org/10.1117/12.2246984

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