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Two-dimensional hexagonal boron nitride (hBN) has emerged as a promising platform for quantum applications as a host of a plethora of quantum emitters (QEs), including optically active spin defects. It is critical to achieve position-controlled generation of these QEs and their integration with photonic/plasmonic structures. In this work, we demonstrate a novel method to deterministically create single QEs in hBN by nanoindentation with atomic force microscopy, with a yield of >30% for various indent sizes. Furthermore, we also demonstrate a route to enhance the brightness of spin defects in hBN up to 120 times by coupling them with nano-patch antennas.
Vladimir M. Shalaev
"Quantum emitters in hexagonal boron nitride and plasmonic enhancement", Proc. SPIE PC12197, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX, PC121970Q (3 October 2022); https://doi.org/10.1117/12.2632854
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Vladimir M. Shalaev, "Quantum emitters in hexagonal boron nitride and plasmonic enhancement," Proc. SPIE PC12197, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX, PC121970Q (3 October 2022); https://doi.org/10.1117/12.2632854