The paper discusses a quantum transport model that includes explicitly the phonon-mediated intervalley photocarrier transfer in InAs/AlAsSb heterostructures, enabling the simulation-based assessment of hot-carrier extraction via the valley-photovoltaic effect. The model resolves both, intra- and intervalley scattering rates and valley-specific currents, and is applied at short circuit conditions and under forward bias voltage. In both cases, the impact of intervalley charge transfer and L-valley transport on photocarrier collection is evaluated. Special consideration is given to the contacting of the L-valley states for efficient charge extraction, and to the carrier temperature of the steady-state population that dominates the dark current at the radiative limit.
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