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13 March 2023 GeSnOI technology enabling room temperature lasing with GeSn alloys
Moustafa El Kurdi, Andjelika Bjelajac, Maksym Gromovyi, Emilie Sakat, Zoran Ikonic, Vincent Reboud, Alexei Chelnokov, Nicolas Pauc, Vincent Calvo, Jean-Michel Hartmann, Dan Buca
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Proceedings Volume PC12426, Silicon Photonics XVIII; PC1242606 (2023) https://doi.org/10.1117/12.2646181
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Since the first demonstration of lasing with GeSn alloys up to 100 K, many researches were devoted to increase the laser operation up to room temperature. We will discuss the band sructure requirements and the practical issues that have to be addressed in order to reach robust gain with increasing temperature. We show that misfit defects managment and strain engineering are key ingredients. For that purpose we developped a GeSn-On-Insulator platform, that combine strain engineering , defective interfacial layer removal and laser resonator designs ad fabrication. Here we show that room temperature lasing, up to 300 K, can be obtained in microdisk resonators fabricated on a GeSnOI layer both with using high Sn-content in the gain medium, e. g. 17% or with applying tensile strain to a layer with lower Sn-content of 14%.
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Moustafa El Kurdi, Andjelika Bjelajac, Maksym Gromovyi, Emilie Sakat, Zoran Ikonic, Vincent Reboud, Alexei Chelnokov, Nicolas Pauc, Vincent Calvo, Jean-Michel Hartmann, and Dan Buca "GeSnOI technology enabling room temperature lasing with GeSn alloys", Proc. SPIE PC12426, Silicon Photonics XVIII, PC1242606 (13 March 2023); https://doi.org/10.1117/12.2646181
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KEYWORDS
Laser development
Laser resonators
Manufacturing
Resonators
Semiconductor lasers
Semiconductors
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