Poster
5 October 2023 Lithography-free vertical Au/WS2/Ag Schottky-junction photovoltaic devices
Anh Thi Nguyen, Jun Wang, Eunseo Cho, Seoyoung Lim, Soyeong Kwon, Jungeun Song, Keya Zhou, Dong-Wook Kim
Author Affiliations +
Conference Poster
Abstract
WS2 multilayer flakes were prepared on template-stripped ultra-flat Ag layers using a metal-assisted exfoliation technique. Using a shadow mask consisting of holey carbon films, 2-micron-sized Au top electrodes were evaporated on the WS2 flakes to fabricate vertical Au/WS2/Ag devices. The photovoltaic characterization of the devices indicated the formation of Schottky diodes, and the estimated power conversion efficiency at 625-nm visible light was as high as 5.0%. Moreover, our Au/WS2/Ag devices exhibited broadband and incident-angle-insensitive absorption capability. The lithography-free processes suggested in this work enabled us to fabricate high-yield and high-performance devices.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anh Thi Nguyen, Jun Wang, Eunseo Cho, Seoyoung Lim, Soyeong Kwon, Jungeun Song, Keya Zhou, and Dong-Wook Kim "Lithography-free vertical Au/WS2/Ag Schottky-junction photovoltaic devices", Proc. SPIE PC12651, Low-Dimensional Materials and Devices 2023, PC126510T (5 October 2023); https://doi.org/10.1117/12.2676336
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KEYWORDS
Photovoltaics

Fabrication

Heterojunctions

Multilayers

Semiconducting wafers

Photovoltaic materials

Shadows

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