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We present the potential performance improvement provided by new materials and architectures for EUV Lithography. Typically EUV materials and their performance in photomasks are limited by either lack of absorption in an absorber layer, or too much absorption in a reflective multilayer. The fundamental absorption of materials is widely accepted as limiting at EUV wavelengths, as EUV radiation excites plasmons (quanta of charged coupled energy) above a given plasma frequency of the material. In the universe today very few materials exist that do not absorb. In this presentation we show how materials and architectures may be designed to modify the absorption of a material and therefore present more flexibility in lithography design and potential for new features and benefits in photomasks for high NA lithography.
Supriya L. Jaiswal
"New materials and their architectures for EUV photomasks", Proc. SPIE PC12751, Photomask Technology 2023, PC127510F (22 November 2023); https://doi.org/10.1117/12.2687758
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Supriya L. Jaiswal, "New materials and their architectures for EUV photomasks," Proc. SPIE PC12751, Photomask Technology 2023, PC127510F (22 November 2023); https://doi.org/10.1117/12.2687758