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22 November 2023 Study of cross-linking influence on lithographic performance for EB resist
Kei Yamamoto, Kotaro Takahashi
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Proceedings Volume PC12751, Photomask Technology 2023; PC127510L (2023) https://doi.org/10.1117/12.2685746
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States
Abstract
EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. One of the most critical issues for EB lithography process is the stochastic issue which is induced by low density of quanta due to high energy of e-beam exposure. Such stochastic can induce the heterogeneity of various reactions in the photoresist. As a result, serious performance degradation is caused in key lithographic areas such as LWR (line width roughness) and resolution. It’s well known that quanta stochastic can be reduced by high dose condition. Thus, demand of high dose EB resist has been risen for further performance improvement. However, it's also well known that the side-reaction, such as cross-linking, is occurred in the photoresist using PHS (polyhydroxystyrene) based polymer on the high dose e-beam condition. In this study, several positive-tone chemically amplified resist (pCAR) formulations with the different materials were studied under Point-beam conditions to investigate the cross-linking influence on lithographic performance.
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Kei Yamamoto and Kotaro Takahashi "Study of cross-linking influence on lithographic performance for EB resist", Proc. SPIE PC12751, Photomask Technology 2023, PC127510L (22 November 2023); https://doi.org/10.1117/12.2685746
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KEYWORDS
Lithography
Extreme ultraviolet
Stochastic processes
Electron beam lithography
Line width roughness
Photoresist materials
Chemically amplified resists
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