Mid-infrared third-harmonic generation by free-electron nonlinearities in heavily doped InGaAs nanoantennas

Michele Ortolani; Andrea Rossetti; Thomas Deckert; Huatian Hu; Tommaso Venanzi; Adel Bousseksou; Federico De Luca; Valeria Giliberti; Marialilia Pea; Isabelle Sagnes; Grégoire Beaudoin; Paolo Biagioni; Enrico Bau; Stefan A. Maier; Andreas Tittl; Raffaele Colombelli; Daniele Brida; Cristian Ciracì

doi:10.1117/12.3000488

13 March 2024 Mid-infrared third-harmonic generation by free-electron nonlinearities in heavily doped InGaAs nanoantennas

Michele Ortolani, Andrea Rossetti, Thomas Deckert, Huatian Hu, Tommaso Venanzi, Adel Bousseksou, Federico De Luca, Valeria Giliberti, Marialilia Pea, Isabelle Sagnes, Grégoire Beaudoin, Paolo Biagioni, Enrico Bau, Stefan A. Maier, Andreas Tittl, Raffaele Colombelli, Daniele Brida, Cristian Ciracì

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Proceedings Volume PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII; PC128690O (2024) https://doi.org/10.1117/12.3000488
Event: SPIE LASE, 2024, San Francisco, California, United States

Abstract

Free electrons in heavily doped semiconductors operate in the hydrodynamic regime, where oscillating velocity, current and electromagnetic field terms can mix and produce relatively strong nonlinear effects in the mid-infrared and terahertz ranges, where the material behaves as a free-electron system. We have designed and realized electron-doped InGaAs nanoantennas with the aim of measuring the efficiency of Third Harmonic Generation (THG) and comparing it with the nonlinearity coefficients predicted by a hydrodynamic model. To observe THG from nanoantennas, we used a difference-frequency generation source of mid-infrared short pulses with center-wavelength tunable between 12 and 6 micrometers. Four different doping levels and several dipole antenna lengths were investigated. The volume-normalized THG efficiencies of free-electrons are much higher than those of the crystal host, as directly shown by analysis of an undoped sample. The THG efficiency is found to peak at a mid-infrared excitation wavelength that depends on the free electron concentration, mirroring the decrease of the plasma wavelength with increasing carrier concentration.

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Michele Ortolani, Andrea Rossetti, Thomas Deckert, Huatian Hu, Tommaso Venanzi, Adel Bousseksou, Federico De Luca, Valeria Giliberti, Marialilia Pea, Isabelle Sagnes, Grégoire Beaudoin, Paolo Biagioni, Enrico Bau, Stefan A. Maier, Andreas Tittl, Raffaele Colombelli, Daniele Brida, and Cristian Ciracì "Mid-infrared third-harmonic generation by free-electron nonlinearities in heavily doped InGaAs nanoantennas", Proc. SPIE PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII, PC128690O (13 March 2024); https://doi.org/10.1117/12.3000488

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KEYWORDS

Mid-IR

Nanoantennas

Electrons

Indium gallium arsenide

Third harmonic generation

Plasma

Semiconductors

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