Improvement of photo-response characteristics of a transistor with metal oxide semiconductor thin film

Jae-Yun Lee; Anvar Tukhtaev; Hanlin Zhao; Xiaolin Wang; Sultonov Khasan Elmurod Ugli; Shi Kai Shi; Beom Gu Lee; Sung-Jin Kim

doi:10.1117/12.3000845

13 March 2024 Improvement of photo-response characteristics of a transistor with metal oxide semiconductor thin film

Jae-Yun Lee, Anvar Tukhtaev, Hanlin Zhao, Xiaolin Wang, Sultonov Khasan Elmurod Ugli, Shi Kai Shi, Beom Gu Lee, Sung-Jin Kim

Author Affiliations +

Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC1288711 (2024) https://doi.org/10.1117/12.3000845
Event: SPIE OPTO, 2024, San Francisco, California, United States

Conference Poster

Abstract

The development of oxide semiconductor films is an essential process for the application of high-performance electronic devices and the development of next-generation neuromorphic systems. Recently, research has been focused on the development of photodetection sensors using indium gallium zinc oxide (IGZO), which shows excellent performance as an active layer in transistors and resistance-changing memories. Various methods have been proposed to improve absorbance in visible light areas by designing additional photo absorption layers or introducing inter-gap sites through chemical processes to improve photo-response properties of IGZO materials with wide band gaps. In this work, we deposited two layers of IGZO thin films and performed annealing processes at different temperatures to improve photo-response properties without additional materials or complicated manufacturing steps. Consequently, we propose a relatively simple method to improve the photo-response properties in high-performance oxide semiconductors and provide a detailed description of the photo-response behavior for future applications of photo sensors and neuromorphic AI devices.

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Jae-Yun Lee, Anvar Tukhtaev, Hanlin Zhao, Xiaolin Wang, Sultonov Khasan Elmurod Ugli, Shi Kai Shi, Beom Gu Lee, and Sung-Jin Kim "Improvement of photo-response characteristics of a transistor with metal oxide semiconductor thin film", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC1288711 (13 March 2024); https://doi.org/10.1117/12.3000845

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