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13 March 2024 Shallow silicon vacancy centers with lifetime-limited optical linewidths in diamond nanostructures
Josh André Zuber, Minghao Li, Marcelli Grimau Puigibert, Jodok Happacher, Patrick Reiser, Brendan J. Shields, Patrick Maletinsky
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Proceedings Volume PC12912, Quantum Sensing, Imaging, and Precision Metrology II; PC129120J (2024) https://doi.org/10.1117/12.3002551
Event: SPIE Quantum West, 2024, San Francisco, California, United States
Abstract
The negatively charged silicon vacancy center (SiV-) in diamond is a promising candidate for single-spin quantum sensing at sub-kelvin temperatures, which requires shallow and optically coherent emitters. We present a robust, scalable approach for creating individual, ∼50nm deep SiV- with lifetime-limited optical linewidths in diamond-nanopillars through an easy-to-realize charge-stabilization scheme, based on 445nm illumination, enabling continuous PLE spectroscopy, without further charge stabilization or repumping. Our results constitute a key step towards the use of near-surface, optically coherent SiV- for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.
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Josh André Zuber, Minghao Li, Marcelli Grimau Puigibert, Jodok Happacher, Patrick Reiser, Brendan J. Shields, and Patrick Maletinsky "Shallow silicon vacancy centers with lifetime-limited optical linewidths in diamond nanostructures", Proc. SPIE PC12912, Quantum Sensing, Imaging, and Precision Metrology II, PC129120J (13 March 2024); https://doi.org/10.1117/12.3002551
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KEYWORDS
Diamond
Silicon
Nanostructures
Quantum sensing
Laser stabilization
Quantum coherence
Quantum magnetometry
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