Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology

C. Bayram; R. Grady; K. Park

doi:10.1117/12.2286738

26 January 2018 Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology

C. Bayram, R. Grady, K. Park

Proceedings Volume 10540, Quantum Sensing and Nano Electronics and Photonics XV; 105401G (2018) https://doi.org/10.1117/12.2286738
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Here we propose a new wide band gap logic circuitry providing emerging power electronics with reliable logic control capabilities with 500 MHz+ switching speeds and withstanding 300V+. Particularly, a three-stage ring oscillator composed of NMOS (μ_e = 1000 cm²/V-s) and PMOS (μ_h = 250 cm²/V-s) cubic phase GaN devices (with V_T of 0.77 V and –0.84 V, respectively) is simulated. The propagation delay is minimized by optimizing the width-to-length ratio (W/L) between the NMOS and PMOS devices. Transient response of the simulation illustrates the ability of the CMOS inverter to operate at a maximum frequency of 1.22 GHz with a full voltage swing between V_DD of 2.5 V and 0 V. The proposed cutting-edge p-channel GaN high hole mobility transistor (HHMT) solves one of the most longstanding problems in power electronics and constitutes the basis of an innovative reduced total life cycle cost that will serve as the cornerstone of the next generation of integrated, scalable, and reliable power systems.

Conference Presentation

Citation Download Citation

C. Bayram, R. Grady, and K. Park "Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 105401G (26 January 2018); https://doi.org/10.1117/12.2286738

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