Mr. Ryan W. Grady Profile

Ryan W. Grady

at Stanford Univ

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Publications (2)

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Proceedings Article | 5 March 2021 Presentation + Paper

Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices

Alwin Daus, Connor McClellan, Kirstin Schauble, Julio Costa, Ryan Grady, Luisa Petti, Giuseppe Cantarella, Niko Münzenrieder, Eric Pop

Proceedings Volume 11687, 116871I (2021) https://doi.org/10.1117/12.2587997

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We discuss the role of aluminum oxide (i.e. Al₂O₃ when stoichiometric) for transistors and sensors based on oxide semiconductors such as InGaZnO (IGZO) and two-dimensional (2D) semiconductors, such as monolayer MoS₂. Aluminum oxide is a well-known capping and dielectric layer in semiconductor technology typically deposited by atomic-layer deposition (ALD), which offers a dense and high-quality film with low gas permeability even when deposited on flexible substrates. However, when deposited at low temperature (< 200°C), aluminum oxide can include a significant amount of fixed charges and defects, which lead to unusual charge trapping and doping effects in semiconductor devices. For example, such charge trapping can cause (apparent) sub-60 mV/decade subthreshold swing at room temperature in IGZO transistors, but can also lead to potential applications in neuromorphic computing. We also discuss effective doping (~10¹³ cm^-2) of 2D semiconductors by thin ALD-grown non-stoichiometric AlO_x capping layers. This is achieved with an aluminum seed layer, which enables uniform growth of the subsequently deposited ALD film. This approach leads to a negative shift in threshold voltage, record on-state current (~700 μA/μm) in a monolayer semiconductor, and drastic reduction in contact resistance. Finally, we investigate the passivation effects of Al₂O₃ capping, which limits the interaction of the underlying semiconductors with ambient air and moisture. We demonstrate improved response in MoS₂ temperature sensors and long-term stability in flexible MoS₂ transistors (8 months). Further, we evaluate the effects of Al₂O₃ passivation on IGZO transistors after aging for 80 months.

Proceedings Article | 26 January 2018 Presentation + Paper

Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology

C. Bayram, R. Grady, K. Park

Proceedings Volume 10540, 105401G (2018) https://doi.org/10.1117/12.2286738

KEYWORDS: Gallium nitride, Field effect transistors, Transistors, Aluminum, Logic, Silicon, Oscillators, Doping, Polarization, Electronics

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Here we propose a new wide band gap logic circuitry providing emerging power electronics with reliable logic control capabilities with 500 MHz+ switching speeds and withstanding 300V+. Particularly, a three-stage ring oscillator composed of NMOS (μ_e = 1000 cm²/V-s) and PMOS (μ_h = 250 cm²/V-s) cubic phase GaN devices (with V_T of 0.77 V and –0.84 V, respectively) is simulated. The propagation delay is minimized by optimizing the width-to-length ratio (W/L) between the NMOS and PMOS devices. Transient response of the simulation illustrates the ability of the CMOS inverter to operate at a maximum frequency of 1.22 GHz with a full voltage swing between V_DD of 2.5 V and 0 V. The proposed cutting-edge p-channel GaN high hole mobility transistor (HHMT) solves one of the most longstanding problems in power electronics and constitutes the basis of an innovative reduced total life cycle cost that will serve as the cornerstone of the next generation of integrated, scalable, and reliable power systems.

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