III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

P. Bhattacharya; A. Hazari; S. Jahangir

doi:10.1117/12.2302548

19 February 2018 III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

P. Bhattacharya, A. Hazari, S. Jahangir

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Proceedings Volume 10553, Novel In-Plane Semiconductor Lasers XVII; 1055302 (2018) https://doi.org/10.1117/12.2302548
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs ~10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

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P. Bhattacharya, A. Hazari, and S. Jahangir "III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range", Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 1055302 (19 February 2018); https://doi.org/10.1117/12.2302548

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