Presentation + Paper
19 February 2018 High-resolution active-matrix 10-μm pixel-pitch GaN LED microdisplays for augmented reality applications
François Templier, Ludovic Dupré, Bertrand Dupont, Anis Daami, Bernard Aventurier, Franck Henry, Denis Sarrasin, Sébastien Renet, Frédéric Berger, François Olivier, Lydie Mathieu
Author Affiliations +
Proceedings Volume 10556, Advances in Display Technologies VIII; 105560I (2018) https://doi.org/10.1117/12.2294527
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We report high resolution (873 x 500), active-matrix, GaN-based LED microdisplays with a pixel pitch of 10 μm. They exhibit the highest resolution for the smallest pixel pitch ever reported for GaN microdisplays. High-density GaN μLED arrays were first patterned at 10-μm pitch on sapphire substrates. Arrays were then hybridized on CMOS active-matrix using the microtube technology. Blue and green monochrome prototypes have been realized. Full video, high-resolution images have been obtained. The performance of these GaN-based microdisplays make them suitable for a wide range of applications from augmented reality and head-up displays to pico- and compact projectors.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
François Templier, Ludovic Dupré, Bertrand Dupont, Anis Daami, Bernard Aventurier, Franck Henry, Denis Sarrasin, Sébastien Renet, Frédéric Berger, François Olivier, and Lydie Mathieu "High-resolution active-matrix 10-μm pixel-pitch GaN LED microdisplays for augmented reality applications", Proc. SPIE 10556, Advances in Display Technologies VIII, 105560I (19 February 2018); https://doi.org/10.1117/12.2294527
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium nitride

Light emitting diodes

Semiconducting wafers

Silicon

Augmented reality

Heads up displays

Image resolution

RELATED CONTENT

8 inch GaN on Si based wafer level chip scale...
Proceedings of SPIE (January 01 1900)
GaN substrates by HVPE
Proceedings of SPIE (February 13 2008)
Epitaxy of GaN LEDs on large substrates Si or...
Proceedings of SPIE (September 21 2006)

Back to Top