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26 February 2020 Strain induced Pockels effect in silicon for electro-optic modulation
Christian Lafforgue, Mathias Berciano, Lucas Deniel, Guillaume Marcaud, Xavier Le Roux, Carlos Alonso-Ramos, Daniel Benedikovic, Vladyslav Vakarin, Alicia Ruiz-Caridad, Paul Crozat, Delphine Marris-Morini, Eric Cassan, Laurent Vivien
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Proceedings Volume 11285, Silicon Photonics XV; 112850D (2020) https://doi.org/10.1117/12.2545682
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
The strong evolution of silicon photonics towards very low power consumption circuits leads to the development of new strategies for photonic devices, especially for power-hungry components such as optical modulators. One strategy is to use Pockels effect in Si waveguides. However, bulk Si is a centrosymmetric semiconductor, which cannot exhibit any second order optical nonlinearities. Nonetheless, under a strain gradient, generated by depositing a stressed layer on Si waveguides, this restriction vanishes. In our work, we experimentally demonstrated a Pockels effect based electro-optic modulation at high frequency (> 5GHz) using a strained silicon Mach-Zehnder modulator.
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Christian Lafforgue, Mathias Berciano, Lucas Deniel, Guillaume Marcaud, Xavier Le Roux, Carlos Alonso-Ramos, Daniel Benedikovic, Vladyslav Vakarin, Alicia Ruiz-Caridad, Paul Crozat, Delphine Marris-Morini, Eric Cassan, and Laurent Vivien "Strain induced Pockels effect in silicon for electro-optic modulation", Proc. SPIE 11285, Silicon Photonics XV, 112850D (26 February 2020); https://doi.org/10.1117/12.2545682
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KEYWORDS
Silicon
Modulation
Waveguides
Electro optics
Semiconductors
Silicon photonics
Photonic devices
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