Poster + Paper
30 April 2023 Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography
Author Affiliations +
Conference Poster
Abstract
Since 2019, the extreme ultraviolet lithography (EUVL) has been applied to the high-volume production of devices. For further scaling, high-numerical aperture (NA) tool and resist materials applicable to high-NA EUVL are required. However, there are no resists applicable to high-NA EUVL. These days, resist materials containing Sn whose EUV absorption cross section is particularly high are attracting much attention. In this research, radiation-induced reaction mechanisms of Sncomplex- side-chain polymers were investigated to obtain the guidelines of material design.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yui Takata, Yusa Muroya, Takahiro Kozawa, Satoshi Enomoto, Bilal Naqvi, and Danilo De Simone "Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 1249826 (30 April 2023); https://doi.org/10.1117/12.2670173
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KEYWORDS
Polymers

Extreme ultraviolet lithography

Electron beam lithography

Extreme ultraviolet

Design and modelling

Electron beams

Internet of things

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