Poster + Paper
27 August 2024 Non-ionising radiation effects in a soft x-ray CMOS image sensor
Author Affiliations +
Conference Poster
Abstract
CIS221-X is a prototype monolithic CMOS image sensor, optimised for soft x-ray astronomy and developed for the proposed European Space Agency THESEUS mission. One significant advantage of CMOS technology is its resistance to radiation damage. To assess this resistance, three backside-illuminated CIS221-X detectors have been irradiated with 10MeV protons using the MC40 cyclotron facility at the University of Birmingham, UK. Each detector received ½, 1 and 2 THESEUS end-of-life proton fluences (6.65 × 108 p+/cm2). One had already been exposed to ionising radiation (up to 59.04krad TID) during a previous radiation campaign. Using unirradiated readout electronics, the electro-optical performance of each device has been measured before and after proton irradiation. No significant change was observed in the readout noise and image lag. An increase in mean dark current was recorded, as was an increase in the number of hot pixels. The degradation of CIS221-X performance due to non-ionising radiation effects is similar to that of comparable CMOS image sensors.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Charles Townsend-Rose, Thomas W. Buggey, James M. Ivory, Imane Dazzazi, Konstantin D. Stefanov, and David J. Hall "Non-ionising radiation effects in a soft x-ray CMOS image sensor", Proc. SPIE 13103, X-Ray, Optical, and Infrared Detectors for Astronomy XI, 131031B (27 August 2024); https://doi.org/10.1117/12.3016669
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KEYWORDS
Dark current

CMOS sensors

Image sensors

Ionizing radiation

Radiation effects

X-ray imaging

X-rays

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