Presentation + Paper
22 November 2024 Advanced absorber and compensation repair for EUV reticles utilizing a novel e-beam-based repair technique
Joseph Rodriguez, Scott Chegwidden, Andrew Elliott, Lingxuan Peng, Dinumol Devasia, Nathan Wilcox, Safak Sayan, Andrew Ridley, Franz-Josef Eberle, Michael Budach, Chanya Nguyen, Felix Hermanns, Horst Schneider, Klaus Edinger
Author Affiliations +
Abstract
The introduction of EUV photomasks has posed significant challenges in defect repair over the years. Defects within the unique multi-layer stack used for the reflective optics can easily lead to printing defects on the wafer. Although absorber compensation repair has been successfully demonstrated in high-volume manufacturing (HVM), it has been accompanied by several obstacles. Next-generation EUV lithography for high numerical aperture (NA) EUV photomasks is proving more difficult due to stringent requirements. The advanced scanner optics demand more precise edge control for photomask repairs, necessitating the incorporation of resist effects in the defect review process to better emulate wafer impact.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph Rodriguez, Scott Chegwidden, Andrew Elliott, Lingxuan Peng, Dinumol Devasia, Nathan Wilcox, Safak Sayan, Andrew Ridley, Franz-Josef Eberle, Michael Budach, Chanya Nguyen, Felix Hermanns, Horst Schneider, and Klaus Edinger "Advanced absorber and compensation repair for EUV reticles utilizing a novel e-beam-based repair technique", Proc. SPIE 13216, Photomask Technology 2024, 132160R (22 November 2024); https://doi.org/10.1117/12.3038766
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KEYWORDS
Extreme ultraviolet

Reticles

Photomasks

Semiconducting wafers

High volume manufacturing

Optics manufacturing

Printing

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