Rapid thermal annealing of the through-Ta5Si3 film implantation on GaAs

Fon-Shan Huang; W. S. Chen; Tzu-min Hsu

doi:10.1117/12.25702

1 April 1991 Rapid thermal annealing of the through-Ta₅Si₃ film implantation on GaAs

Fon-Shan Huang, W. S. Chen, Tzu-min Hsu

Author Affiliations +

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25702
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Silicon ion iniplantation on GaAs through tantaluni silicide film is investigated. The rapid thermal annealing is used to activate the dopant and to provide the abrupt shallow junction. After annealing process the carrier mobility ideality factor and barrier height of Ta5Si3/GaAs Schottky diode were measured. The carrier profiles were determined by C-V and differential Hall methods. The Rutherford back scattering and photoreflectance were performed in order to study the interdiffusion and internal field near the surface. Our experiments show the through-film (tantalum silicide)-implantation is the promising process in SAG technology. 1.

Citation Download Citation

Fon-Shan Huang, W. S. Chen, and Tzu-min Hsu "Rapid thermal annealing of the through-Ta₅Si₃ film implantation on GaAs", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25702

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