Energy spectrum of irradiation-induced defects in Pb1-xSnxTe

Evgenii P. Skipetrov; Alexander M. Mousalitin; A. N. Nekrasova; A. V. Ryazanov

doi:10.1117/12.280438

26 August 1997 Energy spectrum of irradiation-induced defects in Pb_1-xSn_xTe

Evgenii P. Skipetrov, Alexander M. Mousalitin, A. N. Nekrasova, A. V. Ryazanov

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280438
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The effect of high hydrostatic pressure on the galvanomagnetic properties of n- and p-Pb_1-xSn_xTe irradiated with electrons has been investigated. It has been shown that independently of the initial type of conductivity under the electron irradiation the Fermi level in Pb_1-xSn_xTe alloys reaches the limiting position and 'soft' pinning of the Fermi level in the valence band occurs. In all irradiated alloys the reconstruction of the energy spectrum under pressure leads to the increase of the hole concentration due to the redistribution of electrons between the valence band and the radiation-induced resonant states situated slightly below the valence band top. On the basis of the obtained experimental results the model of the energy spectrum of irradiated Pb_1-xSn_xTe alloys has been discussed. In terms of this model by comparing the experimental and theoretical fluence and pressure dependences of the free carriers concentration the main parameters of irradiation- induced defect states in Pb_1-xSn_xTe alloys were determined.

Citation Download Citation

Evgenii P. Skipetrov, Alexander M. Mousalitin, A. N. Nekrasova, and A. V. Ryazanov "Energy spectrum of irradiation-induced defects in Pb_1-xSn_xTe", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280438

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