Paper
22 June 1998 Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD
Yoon-Ho Choi, Sung-Woo Kim, Jae Hyung Yi, Tae-Kyung Yoo, Chang-Hee Hong, Sun-Tae Kim
Author Affiliations +
Proceedings Volume 3419, Optoelectronic Materials and Devices; 341903 (1998) https://doi.org/10.1117/12.311009
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
The homoepitaxial growth InGaN/GaN double heterostructure (DH) light emitting diode (LED) by low pressure metalorganic chemical vapor deposition is reported for the first time. Hydride Vapor Phase Epitaxy prepared 350micrometers -thick GaN single crystal was polished down to a surface roughness of 10 angstrom rms to serve as the substrate. The LED exhibited luminous intensity of 850mcd and forward voltage of 5V at a current of 20mA. The peak wavelength and full width at half maximum of electroluminescence were 490nm and 83nm, respectively.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoon-Ho Choi, Sung-Woo Kim, Jae Hyung Yi, Tae-Kyung Yoo, Chang-Hee Hong, and Sun-Tae Kim "Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341903 (22 June 1998); https://doi.org/10.1117/12.311009
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KEYWORDS
Light emitting diodes

Metalorganic chemical vapor deposition

Crystals

Electroluminescence

Gallium nitride

Heterojunctions

Polishing

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