Fin field effect transistor directionality impacts printing of implantation shapes

Xiren Wang; Yuri Granik

doi:10.1117/1.JMM.17.1.013504

25 January 2018 Fin field effect transistor directionality impacts printing of implantation shapes

Xiren Wang, Yuri Granik

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 17, Issue 1, 013504 (January 2018). https://doi.org/10.1117/1.JMM.17.1.013504

Abstract

In modern integrated circuit (IC) fabrication processes, the photoresist receives considerable illumination energy that is reflected by underlying topography during optical lithography of implantation layers. Bottom antireflective coating (BARC) is helpful to mitigate the reflection. Often, however, BARC is not used, because its removal is technically challenging, in addition to its relatively high economic cost. Furthermore, the advanced technology nodes, such as 14/10-nm nodes, have introduced fin field effect transistor (FinFET), which makes reflection from nonuniform silicon substrates exceptionally complicated. Therefore, modeling reflection from topography becomes obligatory to accurately predict printing of implantation shapes. Typically, FinFET is always fixed in one direction in realistic designs. However, the same implantation rectangle may be oriented in either horizontal or vertical direction. Then, there are two types of relations between the critical dimension (CD) and FinFET, namely a parallel-to and a perpendicular-to relation. We examine the fin directionality impact on CD. We found that this impact may be considerable in some cases. We use our in-house rigorous optical topography simulator to reveal underlining physical reasons. One of the major causes of the CD differences is that in the parallel orientation, the solid sidewalls of the fins conduct considerable light reflections unlike for the perpendicular orientation. This finding can aid the compact modeling in optical proximity correction of implantation masks.

Citation Download Citation

Xiren Wang and Yuri Granik "Fin field effect transistor directionality impacts printing of implantation shapes," Journal of Micro/Nanolithography, MEMS, and MOEMS 17(1), 013504 (25 January 2018). https://doi.org/10.1117/1.JMM.17.1.013504

Received: 21 April 2017; Accepted: 26 December 2017; Published: 25 January 2018

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $24.00

Non-members: $28.00 ADD TO CART

JOURNAL ARTICLE
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Critical dimension metrology

Photoresist materials

Reflection

Printing

Cadmium

Silicon

Solids

Show All Keywords

Keywords/Phrases

Search In:

Publication Years