This is an editorial on The Ethics of Scientific Publication.

This is a list of reviewers who volunteered for JM3 in 2017.

This work advances the fabrication capabilities of a two-step lithography technique known as nanomasking for patterning metallic nanoslit (nanogap) structures with sub-10-nm resolution, below the limit of the lithography tools used during the process. Control over structure and slit geometry is a key component of the reported method, exhibiting the control of lithographic methods while adding the potential for mass-production scale patterning speed during the secondary step of the process. The unique process allows for fabrication of interesting geometric combinations such as dual-width gratings that are otherwise difficult to create with the nanoscale resolution required for applications, such as nanoscale optics (plasmonics) and electronics. The method is advanced by introducing a bimetallic fabrication design concept and by demonstrating blanket nanomasking. Here, the need for the secondary lithography step is eliminated improving the mass-production capabilities of the technique. Analysis of the gap width and edge roughness is reported, with the average slit width measured at 7.4±2.2  nm. It was found that while no long-range correlation exists between the roughness of either gap edge, and there are ranges in the order of tens of nanometers over which the slit edge roughness is correlated or anticorrelated across the gap. This work helps quantify the nanomasking process, which aids in future fabrications and leads toward the development of more accurate computational models for the optical and electrical properties of fabricated devices.

Accurate characterization of image rippling is critical in early detection of back-end-of-line (BEOL) patterning weakpoints, as most defects are strongly associated with excessive rippling that does not get effectively compensated by optical proximity correction (OPC). We correlate image contour with design shapes to account for design geometry-dependent rippling signature, and explore the best practice of OPC fragmentation for BEOL geometries. Specifically, we predict the optimum contour as allowed by the lithographic process and illumination conditions and locate ripple peaks, valleys, and inflection points. This allows us to identify potential process weakpoints and segment the mask accordingly to achieve the best correction results.

Standard-cell design, technology choices, and place and route (P&R) efficiency are deeply interrelated in CMOS technology nodes below 10 nm, where lower number of tracks cells and higher pin densities pose increasingly challenging problems to the router in terms of congestion and pin accessibility. To evaluate and downselect the best solutions, a holistic design-technology co-optimization approach leveraging state-of-the-art P&R tools is thus necessary. We adopt such an approach using the imec N7 technology platform, with contacted poly pitch of 42 nm and tightest metal pitch of 32 nm, by comparing post P&R area of an IP block for different standard cell configurations, technology options, and cell height. Keeping the technology node and the set of ground rules unchanged, we demonstrate that a careful combination of these solutions can enable area gains of up to 50%, comparable with the area benefits of migrating to another node. We further demonstrate that these area benefits can be achieved at isoperformance with >20% reduced power. As at the end of the CMOS roadmap, conventional scaling enacted through pitch reduction is made more and more challenging by constraints imposed by lithography limits, material resistivity, manufacturability, and ultimately wafer cost, the approach shown herein offers a valid, attractive, and low-cost alternative.

In modern integrated circuit (IC) fabrication processes, the photoresist receives considerable illumination energy that is reflected by underlying topography during optical lithography of implantation layers. Bottom antireflective coating (BARC) is helpful to mitigate the reflection. Often, however, BARC is not used, because its removal is technically challenging, in addition to its relatively high economic cost. Furthermore, the advanced technology nodes, such as 14/10-nm nodes, have introduced fin field effect transistor (FinFET), which makes reflection from nonuniform silicon substrates exceptionally complicated. Therefore, modeling reflection from topography becomes obligatory to accurately predict printing of implantation shapes. Typically, FinFET is always fixed in one direction in realistic designs. However, the same implantation rectangle may be oriented in either horizontal or vertical direction. Then, there are two types of relations between the critical dimension (CD) and FinFET, namely a parallel-to and a perpendicular-to relation. We examine the fin directionality impact on CD. We found that this impact may be considerable in some cases. We use our in-house rigorous optical topography simulator to reveal underlining physical reasons. One of the major causes of the CD differences is that in the parallel orientation, the solid sidewalls of the fins conduct considerable light reflections unlike for the perpendicular orientation. This finding can aid the compact modeling in optical proximity correction of implantation masks.

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels—“internal, external, curvature, Gaussian, z_profile”—designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Analysis of physical modeling results can provide unique insights into extreme ultraviolet stochastic variation, which augment, and sometimes refute, conclusions based on physical intuition and even wafer experiments. Simulations verify the primacy of “imaging critical” counting statistics (photons, electrons, and net acids) and the image/blur-dependent dose sensitivity in describing the local edge or critical dimension variation. But the failure of simple counting when resist thickness is varied highlights a limitation of this exact analytical approach, so a calibratable empirical model offers useful simplicity and convenience. Results presented here show that a wide range of physical simulation results can be well matched by an empirical two-parameter model based on blurred image log-slope (ILS) for lines/spaces and normalized ILS for holes. These results are largely consistent with a wide range of published experimental results; however, there is some disagreement with the recently published dataset of De Bisschop. The present analysis suggests that the origin of this model failure is an unexpected blurred ILS:dose-sensitivity relationship failure in that resist process. It is shown that a photoresist mechanism based on high photodecomposable quencher loading and high quencher diffusivity can give rise to pitch-dependent blur, which may explain the discrepancy.

In current CMOS technology, parameter variations are playing a vital role in limiting the benefits of downscaling, especially in the nanodomain. This work presents the investigation of random dopant fluctuation (RDF) in several possible line-edge roughness (LER)-induced fin shapes of spacer- (i.e., correlated LER) and resist- (i.e., uncorrelated LER) defined patterning techniques for a 14-nm FinFET structure. The three-dimensional (3-D) technology computer-aided design simulation on a large statistical ensemble has been carried out to analyze the impact of the RDF on various device parameters such as threshold voltage, drive current, off current, and drain-induced barrier lowering. It is observed that the impact of RDF on electrical parameters mainly depends on the fin shape and is dominant in all resist-defined FinFET structures. It is also found that the impact of RDF can diminish significantly using the spacer-defined patterning technique. Further, the impact of RDF in spacer- and resist-defined FinFET structures has been investigated for noise margins of 6-T static random access memories (SRAM). It is concluded that random dopant variations in SRAM performance offer better immunity in the case of spacer-defined FinFETs compared with resist-defined FinFETs.

Directed self-assembly (DSA) has emerged as one of the most compelling next-generation patterning techniques for sub 7 nm via or contact layers. A key issue in enabling DSA as a mainstream patterning technique is the generation of grapho-epitaxy-based guiding pattern (GP) shapes to assemble the contact patterns on target with high fidelity and resolution. Current GP generation is mostly empirical, and limited to a very small number of via configurations. We propose the first model-based GP synthesis algorithm and methodology for on-target and robust DSA, on general via pattern configurations. The final postoptical proximity correction-printed GPs derived from our original synthesized GPs are resilient to process variations and continue to maintain the same DSA fidelity in terms of placement error and target shape.

We developed an extreme ultraviolet (EUV) scatterometer equipped with a table-top EUV source for the characterization of nanoscale grating lines. Appropriate orders of high-harmonic generation at wavelengths ranging from 25 to 35 nm are selected as the coherent light source for high-resolution spatial performance. It is shown that the grating surface profile significantly affects the scattered diffraction intensities and can be retrieved by the structure reconstruction algorithms using inverse modeling by rigorous coupled wave analysis.

Low resistance is an important requirement for microcoils which act as a signal receiver to ensure low thermal noise during signal detection. High-aspect ratio (HAR) planar microcoils entrenched in blind silicon trenches have features that make them more attractive than their traditional counterparts employing electroplating through a patterned thick polymer or achieved through silicon vias. However, challenges met in fabrication of such coils have not been discussed in detail until now. This paper reports the realization of such HAR microcoils embedded in Si blind trenches, fabricated with a single lithography step by first etching blind trenches in the silicon substrate with an aspect ratio of almost 3∶1 and then filling them up using copper electroplating. The electroplating was followed by chemical wet etching as a faster way of removing excess copper than traditional chemical mechanical polishing. Electrical resistance was further reduced by annealing the microcoils. The process steps and challenges faced in the realization of such structures are reported here followed by their electrical characterization. The obtained electrical resistances are then compared with those of other similar microcoils embedded in blind vias.

This study presents a microelectromechanical systems S-springs vibration ring gyroscope (MSVRG), which is driven by electrostatic force and detected by capacitance. First, a ring resonator structure with eight S-shaped symmetrical supporting springs is developed, and the capacitor electrodes are designed according to the vibration characteristics of the ring resonator. Then, a precise equivalent stiffness model of MSVRG is established based on the vibration mechanics and the Cassette theorem, which can be employed for any other ring gyroscope with differently shaped springs. Moreover, the mode resonant frequency error of between experiments, finite-element analysis (FEA) and theory calculation, is 10.54% and 3.76%, respectively. After that, the process of MSVRG structure is introduced and the structure is manufactured, and the theory calculation and FEA value with processed parameters have 1.19% and 4.59% difference with resonant frequency tested value, respectively. Finally, the static performance of the fabricated MSVRG is tested, and the bias instability is about 0.0119  deg/s and angle random walk is about 0.0359  deg/s1/2 at room temperature.

This paper presents design, modeling, and fabrication of a crab-shape microphone using silicon-on-isolator (SOI) wafer. SOI wafer is used to prevent the additional deposition of sacrificial and diaphragm layers. The holes have been made on diaphragm to prevent back plate etching. Dry etching is used for removing the sacrificial layer, because wet etching causes adhesion between the diaphragm and the back plate. Crab legs around the perforated diaphragm allow for improving the microphone performance and reducing the mechanical stiffness and air damping of the microphone. In this structure, the supply voltage is decreased due to the uniform deflection of the diaphragm due to the designed low-K (spring constant) structure. An analytical model of the structure for description of microphone behavior is presented. The proposed method for estimating the basic parameters of the microphone is based on the calculation of the spring constant using the energy method. The microphone is fabricated using only one mask to pattern the crab-shape diaphragm, resulting in a low-cost and easy fabrication process. The diaphragm size is 0.3  mm×0.3  mm, which is smaller than the conventional microelectromechanical systems capacitive microphone. The results show that the analytical equations have a good agreement with measurement results. The device has the pull-in voltage of 14.3 V, a resonant frequency of 90 kHz, an open-circuit sensitivity of 1.33  mV/Pa under bias voltage of 5 V. Comparing with previous works, this microphone has several advantages: SOI wafer decreases the fabrication process steps, the microphone is smaller than the previous works, and crab-shape diaphragm improves the microphone performances.

We present a successful fabrication and characterization of a capacitive micromachined ultrasonic transducer (CMUT) with SU-8 as the membrane material. The goal of this research is to develop a post-CMOS compatible CMUT that can be monolithically integrated with the CMOS circuitry. The fabrication is based on a simple, three mask process, with all wet etching steps involved so that the device can be realized with minimal laboratory conditions. The maximum temperature involved in the whole process flow was 140°C, and hence, it is post-CMOS compatible. The fabricated device exhibited a resonant frequency of 835 kHz with bandwidth 62 kHz, when characterized in air. The pull-in and snapback characteristics of the device were analyzed. The influence of membrane radius on the center frequency and bandwidth was also experimentally evaluated by fabricating CMUTs with membrane radius varying from 30 to 54  μm with an interval of 4  μm. These devices were vibrating at frequencies from 5.2 to 1.8 MHz with an average Q-factor of 23.41. Acoustic characterization of the fabricated devices was performed in air, demonstrating the applicability of SU-8 CMUTs in airborne applications.

This paper investigates the effect of dynamic excitation and its utility for enhancement of stable displacement range for a double cantilever-based electrostatic microactuator. A coupled electromechanical problem has been formulated using Galerkin method and solved considering dynamic actuation. The effect of excitation frequency is analyzed thoroughly to estimate the maximum stable displacement range of the actuator. Extensive studies illustrate that for suitable ac voltage–frequency combination, the maximum stable tip deflection for the cantilevers can be obtained even in the range of 50% to 90% of initial gap under specific damping. Such inherent dynamic characteristic of the actuator has been exploited here to achieve larger travel range. Furthermore, the theoretical observation has been experimentally demonstrated with a double microcantilever-based structure fabricated using silicon-on-insulator based process. The experimentation has been carried out using a developed in-house set-up. The major advantage in the present study is that unlike reported literature, the extended range has been achieved here without any additional complex circuits or design modifications. The proposed concept can be extended further to improve the displacement range of other microstructures toward different applications.

Developing a self-sustained leadless pacemaker requires the development of an ultralow-frequency energy harvesting system that can fit within the required dimensions. This paper reports on the design and development of two types of PiezoMEMS energy harvesters that fit within the capsule dimensions and have a low resonant frequency between 20 to 30 Hz, which is required for the application. A bullet-shaped mass was designed to maximize the displacement and enhance power density of the devices. In addition, two types of devices were fabricated and compared (i) a silicon-based cantilever and (ii) a parylene-C-based cantilever with a thin aluminum nitride layer. The silicon device demonstrated higher peak power of 29.8  μW compared with the 6.4  μW for the parylene device. However, due to the low duty cycle of the heart rate and the damping factors of the two materials the average power was significantly higher for the parylene device (2.71  μW) compared with the silicon device (1.22  μW) per cantilever. The results demonstrate that a polymer-based energy harvester can increase the average power due to low damping for an impulse-based vibration application.

This paper introduces both optical and mechanical design and simulation of large static deflection MOEMS actuator. The designed device is in the form of an adjustable optical wedge (AOW) laser scanner. The AOW is formed of 1.5-mm-diameter plano-convex lens separated by air gap from plano-concave fixed lens. The convex lens is actuated by staggered vertical comb drive and suspended by rectangular cross-section torsion beam. An optical analysis and simulation of air separated AOW as well as detailed design, analysis, and static simulation of comb -drive are introduced. The dynamic step response of the full system is also introduced. The analytical solution showed a good agreement with the simulation results. A general global minimum optimization algorithm is applied to the comb-drive design to minimize driving voltage. A maximum comb-drive mechanical deflection angle of 12 deg in each direction was obtained under DC actuation voltage of 32 V with a settling time of 90 ms, leading to 1-mm one-dimensional (1-D) steering of laser beam with continuous optical scan angle of 5 deg in each direction. This optimization process provided a design of larger deflection actuator with smaller driving voltage compared with other conventional devices. This enhancement could lead to better performance of MOEMS-based laser beam scanners for imaging and low-speed applications.