InGaAsP Laser Diodes

Gregory H. Olsen

doi:10.1117/12.7972738

1 June 1981 InGaAsP Laser Diodes

Gregory H. Olsen

Author Affiliations +

Optical Engineering, Vol. 20, Issue 3, 203440 (June 1981). https://doi.org/10.1117/12.7972738

Abstract

The advantages and properties of InGaAsP laser diodes in the 1.0 to 1 .7 um spectral region are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating principles of these devices are briefly reviewed. State-of-the-art device results from 1.3 and 1 .55 um devices are then presented. The modal, thermal, and reliability properties of these devices, as well as their commercial availability, are also discussed, and possible directions for future applications are considered.

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Gregory H. Olsen "InGaAsP Laser Diodes," Optical Engineering 20(3), 203440 (1 June 1981). https://doi.org/10.1117/12.7972738

Published: 1 June 1981

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