Innovations may lead to magnetic sensors with superior performance. Examples of this are the chip scale atomic
magnetometer, magnetic tunnel junctions with MgO barriers, and a device for minimizing the effect of 1/f noise, the
MEMS flux concentrator. In the chip scale atomic magnetometer, researchers have been able to fabricate the light
source, optics, heater, optical cell, and photodiode detector in a stack that passes through a silicon wafer. Theoretical and
subsequent experimental work has led to the observation of magnetoresistance values of 400% at room temperature in
magnetic tunnel junctions with MgO barriers. The MEMS flux concentrator has the potential to increase the sensitivity
of magnetic sensors at low frequencies by more than an order of magnitude. The MEMS flux concentrator does this by
shifting the operating frequency to higher frequencies where the 1/f noise is much smaller. The shift occurs because the
motion of flux concentrators on MEMS flaps modulates the field at kHz frequencies at the position of the sensor.
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