A semiconductor laser diode with a nominal relaxation oscillation frequency of 6 GHz with an anti-reflection coating on one facet is coupled to an external high Q cavity with the fundamental resonance set to 5 GHz. The laser diode is mounted in a custom microstrip fixture and is driven by a HP-8510A network analyzer. The experimental and theoretical results show enhancement greater than 25 dB at the external cavity resonance frequencies. The results also show holes near the resonance frequencies which may affect the useful bandwidth.
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