Tunable and ultra-narrow linewidth lasers that are fully integrated remain a missing component and challenge for the thin-film lithium niobate platform, while being useful for applications ranging from data communication to signal processing. Here, we present, for the first time, the demonstration of fully integrated, extended cavity diode lasers combining C-band semiconductor gain chips with TFLN using photonic wire bonding. By leveraging the scalability of photonic wirebonding the laser, with two intra-cavity RSOAs, produces a high on-chip output power of 35 mW and shows single frequency operation with more than 61 dB side mode suppression. By adjusting on-chip heaters the laser can be tuned over >40 nm across the entire gain bandwidth. Using delayed self-heterodyne detection an ultra-narrow, intrinsic linewidth of 1.4 kHz is measured.
Thanks to its high Kerr non-linearity and its low linear absorption, silicon is a material of choice for optical devices in the mid-infrared (from 3 to 5 microns) such as microresonators. In this wavelength range, the available optical sources such as quantum cascade lasers have a limited tunability. Tuning the refractive index of silicon can be achieved by a temperature change of the chip and has been previously demonstrated on ring resonators using integrated heaters or thermo-electric elements. We present a new method for thermo-optical tuning of silicon devices by directly using the light from a laser diode operating at 450 nm. The blue light focused on the silicon induces a local elevation of temperature and thus the refractive index locally increases. When applying this method on silicon ring resonator, the elevation of temperature leads to a decreasing free-spectral range and thus shift the resonances to lower frequencies. At 4.5 µm we measured a tuning efficiency of 200 MHz per mW of incident light. Numerical simulations of the thermo-optical effect show the locality of this tuning method, and confirm the experimental results. Finally a frequency study of the response of this method is performed and a time constant of the order of the micro-second is measured. In conclusion, we propose a fast, local, and non-invasive method for tuning silicon resonators operating in the mid-infrared that can be extended to any silicon-based device.
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