Direct print extreme ultraviolet (EUV) has proven effective for pitch scaling and design rules flexibility. As feature size shrinks, stochastic noise poses challenges that demand innovative solutions. In this abstract, we present a novel approach known as pattern shaping , that not only addresses these challenges but also facilitates new opportunities for advanced patterning strategies. Integrating pattern shaping applications into the process flow reduces process complexity, eliminates the need for additional EUV patterning layers, paves the way for pushing lithographic print boundaries, and enhances the wafer yield. This accelerates the achievement of the technology readiness milestones.
Patterning cost and complexity continues to rise with every node. Although EUV lithography has extended dimensional scaling, its limitations have required the industry to implement multi-EUV and other complex patterning schemes. Single exposure EUV patterning is limited by stochastic defects at sub-36nm pitch. Also, counter-scaling between pitch and tip-to-tip spacing limits how close patterned features can be packed in the non-preferred direction. Multi-EUV patterning schemes significantly increase cost while also introducing Edge Placement Errors (EPE). We discuss here an innovative pattern shaping capability which can elongate pre-defined line/space and hole patterns to address these challenges. We will discuss various process knobs including reactive chemistry and material selectivity which can be tuned to allow precision pattern shaping. We will also show how this capability can be used for sidewall processing for applications such as asymmetric spacer removal. Directional pattern shaping has the potential to be a powerful tool in the patterning engineer’s toolbox to help further extend Moore’s law.
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