In this talk we will review our recent demonstrations of mid-IR lasers grown on (001) Si or Ge substrates (diode lasers, interband cascade lasers, quantum cascade lasers) and compare their performance to those grown on their native substrates. We will demonstrate light coupling from lasers grown on patterned Si photonics wafers to passive SiN waveguides, with a coupling efficiency in line with simulations. Finally, we will discuss and evaluate strategies to enhance the coupling efficiency.
Silicon photonics can have a major impact on the advancement of mid-IR photonics by leveraging the mature and reliable high-volume fabrication technologies already developed for microelectronic integrated circuits. Germanium, already used in silicon photonics, is a promising material for increasing the operating wavelength of Group-IV-based photonic integrated circuits beyond 8 μm and potentially up to 15 μm. High-performance InAs-based quantum cascade lasers grown on Si have been previously reported. In this work, we present InAs-based QCLs directly grown on Ge. The lasers operate near 14 μm with pulsed threshold current densities as low as 0.8 kA/cm2 at room temperature.
In this communication we will present the first semiconductor laser grown on a Si photonics platform in a butt-coupling configuration. A GaSb-based diode laser (DL) was grown on a patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from the template architecture were overcome to demonstrate several mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of light was coupled into the SiN waveguides, in good agreement with theoretical calculations. This work paves the way to future on-chip sensors.
The integration on silicon of light sources emitting in the 2-5 µm wavelength range for sensing applications is currently under the focus of attention.
In this work we have studied the influence of the quantum well number (from 1 to 4 QWs) on the performances of GaSb-based laser diodes grown on silicon and emitting at 2.3 µm. We have observed that – somewhat counterintuitively – the best performances in terms of threshold current and internal losses are achieved with 1 QW. The results will be discussed in comparison with similar laser diodes grown on native GaSb substrates.
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