Electronic beam lithography (EBL) is commonly used for patterning at the nanoscale by way of a focused electron beam. This process can lead to charge accumulation on the surface of the resist when used in conjunction with non-conductive substrate materials, impacting lithographic quality producing egregious shape placement inaccuracies. Current practice requires the use of a deposited metal or conductive polymer film to facilitate charge dissipation at the surface. Such films are often unstable, incompatible and/or can be difficult to remove after exposure. This paper presents the findings of a study of a novel aqueous based quaternary ammonium compound for use in EBL for charge dissipation on non-conductive substrates. This compound was found to effectively prevent charge accumulations across a broad range of resist materials while remaining highly stable at room temperature and easily removed with deionized water or isopropanol after EBL exposure.
Microlithography uses a variety of resists and polymer materials to create patterns and lithographic structures on several
types of substrates. Excellent adhesion of the resists and polymers to the substrate is a prerequisite for successful
patterning and pattern transfer. This paper presents the results of an investigation of the effects of an adhesion promoter,
SurPass, on the lithographic process when used in combination with a variety of resists, and substrate materials. SurPass
is a waterborne, non-hazardous, cationic organic surface active agent that promotes adhesion by modifying the substrate
surface energy without deposition, chemical change or impact on electrical properties of the substrate material. The
effectiveness of SurPass in combination with several novolac and epoxy resists on various substrate materials will be
presented.
This paper presents the findings of a cationic surface active agent used to promote adhesion on an InGaAs multilayer system on GaAs. The improved adhesion of the HSQ resist allowed the electron exposure dose to be reduced by a factor of four, and enabled the production of features sizes down to 30nm. Moreover, the process latitude is greatly increased for both small and large lithographic features.
This paper presents the results of a non-HMDS (non-silane) adhesion promoter that was used to
reduce the zeta potential for very thin (proprietary) polymer on silicon. By reducing the zeta
potential, as measured by the minimum sample required to fully coat a wafer, the amount of polymer
required to coat silicon substrates was significantly reduced in the manufacture of X-ray windows
used for high transmission of low-energy X-rays. Moreover, this approach used aqueous based
adhesion promoter described as a cationic surface active agent that has been shown to improve
adhesion of photoresists (positive, negative, epoxy [SU8], e-beam and dry film). As well as
reducing the amount of polymer required to coat substrates, this aqueous adhesion promoter is nonhazardous,
and contains non-volatile solvents.
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