Ms. Anna Filipchuk Profile

Anna Filipchuk

at Modulight Inc

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Proceedings Article | 4 March 2022 Presentation + Paper

Thermal management optimization in high-power 3D sensing VCSELs

A. Filipchuk, K. Nechay, R. Ulkuniemi, S. Talmila, P. Uusimaa

Proceedings Volume 11982, 119820E (2022) https://doi.org/10.1117/12.2608551

KEYWORDS: Vertical cavity surface emitting lasers, Epoxies, Resistance, Three dimensional sensing, Packaging, Thermography, Quantum computing, Thermal effects, Temperature metrology, Refractive index

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Vertical-cavity surface-emitting lasers (VCSELs) have recently paved their way into the 3D sensing market, specifically in mobile device applications. Vertical emission of VCSELs enables arranging single emitters into high-power 2D arrays. Thus, VCSEL arrays require efficient heat management which can be implemented by the means of packaging, both to improve thermal conductivity and to keep VCSEL chips intact. This becomes particularly important when considering also very high-density laser arrays and 2D matrices for quantum computing targeting a larger number of parallel outputs. Despite VCSELs decreased temperature sensitivity, their internal efficiency strongly depends on the internal temperature rise, which is defined by the dissipated power and thermal impedance of the laser assembly. Thermal impedance effect is more notable in the proximity to the gain medium, resulting into a drastic temperature gradient due to relatively thick substrate and its poor thermal conductivity. This prevents efficient heat dissipation in the gain media and creates a need for additional heat sinking. In this work, the improved heat sinking is implemented by packaging VCSEL arrays onto AIN sub mounts and subsequently encapsulating them into a thermally conductive and optically transparent epoxy. Thus, the closest proximity of the gain media to the heat sink is established, leading to an enhanced heat flow. Quantitative evaluation of the heat flow is performed by determining thermal resistance, defined as a ratio of the shift rates in the emission spectrum produced by varying pumping current and the heat sink temperature. The evaluation of thermal resistance of the devices with and without epoxy, not reported earlier, is performed to quantitively demonstrate the obtained improvements in the heat flow, efficiency, and output power.

Proceedings Article | 5 March 2021 Presentation + Paper

High-efficiency vertically-emitting chipsets for 3D and proximity sensing

K. Nechay, R. Ulkuniemi, A. Filipchuk, T. Hartikainen, V. Kaivosoja, R. Hietikko, J. Nikkinen, J. Sillanpaa, P. Melanen, V. Vilokkinen, S. Talmila, P. Uusimaa

Proceedings Volume 11668, 116680R (2021) https://doi.org/10.1117/12.2577229

KEYWORDS: Vertical cavity surface emitting lasers, 3D surface sensing, Three dimensional sensing, Oxides, Thermal oxidation, Structured light, Sensors, Semiconductors, Semiconducting wafers, Oxidation

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Vertical-cavity surface-emitting lasers (VCSELs) have just recently started generating a lot of interest as the illumination source in the multitude of commercial applications. VCSELs capability to provide narrow spectrum emission with low temperature sensitivity and high beam quality, coupled with the possibility of nanosecond pulses generation, makes VCSELs an excellent laser platform for the outdoors, high-precision time-of-flight (ToF) and structured light applications. These advantageous features of VCSELs emission arise from their vertical cavity geometry, which also enables possible VCSELs direct integration onto circuitry and allows power scaling by arranging single-emitting VCSELs into compact high-power 2D arrays. These benefits have made VCSEL the current most popular illumination source for the 3D sensing applications both in the consumer market (e.g. proximity sensors for face and gesture recognition) as well as in the industrial sector (e.g. automotive short- to middle-range LiDAR and in-cabin monitoring). We present development results of both high-efficiency VCSEL single-emitters and multi-Watt VCSEL arrays emitting at the 940 nm purposed for 3D sensing applications. The VCSEL development involved optimization of epitaxial design in terms of DBR doping concentrations and the material content of the bottom DBR and oxide layer. While, on the other hand, optimization of the device parameters and processes targeted oxide aperture and mesa diameters, as well as etching depth. Wet thermal oxidation process has been specifically developed to facilitate precise oxidation depth control, run-torun reproducibility, and uniformity on the wafer scale. Successful VCSEL development is attributed to the Modulight’s full-cycle in-house semiconductor fabrication capabilities.

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