Prof. Atsushi A. Yamaguchi Profile

Prof. Atsushi A. Yamaguchi

Professor at Kanazawa Institute of Technology

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Author

Publications (5)

Proceedings Article | 9 March 2024 Presentation

Determination of deformation potentials of InGaN alloy materials based on photoluminescence polarization measurements under uniaxial stress application

Atsushi Yamaguchi, Maho Ohara, Tomohiro Makino, Tatsushi Hamaguchi, Rintaro Koda, Keito Mori-Tamamura

Proceedings Volume PC12886, PC128860V (2024) https://doi.org/10.1117/12.2691406

KEYWORDS: Polarization, Indium gallium nitride, Deformation, Photoluminescence, Alloys, Gallium nitride, Anisotropy, Vertical cavity surface emitting lasers, Thin films, Quantum wells

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Proceedings Article | 9 March 2024 Presentation

Simultaneous microscopic PA/PL line-scan measurements in InGaN-QWs on a stripe-core GaN Substrate

Shoki Jinno, Keito Mori-Tamamura, Atushi Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya

Proceedings Volume PC12886, PC128860B (2024) https://doi.org/10.1117/12.3000459

KEYWORDS: Line scan image sensors, Gallium nitride, Quantum light generation, Signal intensity, Quantum wells, Statistical analysis, Quantum properties, Quantum light, Quantum detection, Photoluminescence

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Proceedings Article | 16 February 2017 Paper

Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements

Atsushi Yamaguchi, Takashi Nakano, Shigeta Sakai, Haruki Fukada, Yuya Kanitani, Shigetaka Tomiya

Proceedings Volume 10104, 1010409 (2017) https://doi.org/10.1117/12.2252468

KEYWORDS: Luminescence, Indium gallium nitride, Carrier dynamics, Statistical analysis, Quantum wells, Internal quantum efficiency, Cryogenics, Nonlinear optics, Physics, Temperature metrology, Signal detection, Signal processing, Semiconductors, Light emitting diodes

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Proceedings Article | 26 February 2016 Paper

Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals

T. Nakano, K. Kawakami, A. Yamaguchi

Proceedings Volume 9748, 97481W (2016) https://doi.org/10.1117/12.2212243

KEYWORDS: Gallium nitride, Internal quantum efficiency, Luminescence, Statistical analysis, Semiconductors, Spectroscopy, Optical testing, Light emitting diodes, Cryogenics, Nonlinear optics, Signal processing, Signal detection, External quantum efficiency, Transmittance, Temperature metrology

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Proceedings Article | 26 February 2016 Paper

Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements

K. Kawakami, T. Nakano, A. Yamaguchi

Proceedings Volume 9748, 97480S (2016) https://doi.org/10.1117/12.2211914

KEYWORDS: Gallium nitride, Luminescence, Temperature metrology, Statistical analysis, Carrier dynamics, Light emitting diodes, Internal quantum efficiency, Cryogenics, Luminous efficiency, Semiconductors, Metalorganic chemical vapor deposition, Signal detection

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