The development of oxide semiconductor films is an essential process for the application of high-performance electronic devices and the development of next-generation neuromorphic systems. Recently, research has been focused on the development of photodetection sensors using indium gallium zinc oxide (IGZO), which shows excellent performance as an active layer in transistors and resistance-changing memories. Various methods have been proposed to improve absorbance in visible light areas by designing additional photo absorption layers or introducing inter-gap sites through chemical processes to improve photo-response properties of IGZO materials with wide band gaps. In this work, we deposited two layers of IGZO thin films and performed annealing processes at different temperatures to improve photo-response properties without additional materials or complicated manufacturing steps. Consequently, we propose a relatively simple method to improve the photo-response properties in high-performance oxide semiconductors and provide a detailed description of the photo-response behavior for future applications of photo sensors and neuromorphic AI devices.
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