The adoption of tier stacking (dual deck) leads to increasingly high aspect ratios and poses challenges in controlling overlay, tilt, and misalignment in the manufacturing processes for next generation 3D NAND devices. In this work we address metrology challenges such as tilt and overlay separation, measurement robustness influenced by process variation, and nonlinearity of spectral response to asymmetries. We show that Mueller measurement can separate overlay and tilt signals through distinct spectral response analyzed by a machine learning method with reference data. To reduce asymmetry measurement errors caused by process variation such as critical dimension (CD) and thickness changes, we propose and demonstrate improvement of tilt measurements on blind test wafers by feeding forward CD measurement results to the analysis of tilt signal. We also investigate nonlinear regression and show its capability to extend overlay measurement limit from linear response range, ±0.25pitch, to ±0.43pitch. In addition, for small structural asymmetries introduced by channel hole tilt, test RMSE is reduced by 20–40% from nonlinear regression alone or combined with CD feed-forward. We demonstrate that spectroscopic Mueller matrix measurements, paired with advanced machine learning analysis, provide nondestructive and accurate measurement of tilt, overlay, and misalignment for 3D NAND devices with high throughput and fast recipe creation.
A novel mid-infrared critical dimension (IRCD) metrology has been developed on a platform suitable for fab production. Compared to traditional optical critical dimension (OCD) technology based on ultraviolet, visible, and near-IR light, the IRCD system exploits unique optical properties of common semiconductor fab materials in the mid-infrared to enable accurate measurements of high-aspect-ratio etched features. In this paper, we will show two examples of critical dry etch steps in 3D NAND channel formation module of an advanced node that require nondestructive process control: (1) channel hole active area etch and (2) amorphous carbon hardmask etch. In the first example, we take advantage of the absorption bands of silicon dioxide and silicon nitride to get accurate CD measurements at different depths, resulting in high-fidelity z-profile metrology of the channel – key to guiding process development and accelerated learning for 3D NAND device manufacturing. In the second example, the most common amorphous carbon hardmask materials for advanced 3D NAND nodes are opaque in the traditional OCD wavelength range; however, in the mid-infrared, there is light penetration and hence spectral sensitivity to dimensional parameters including sub-surface features. We show successful detection of intentional process skews and as well accurate bottom CD measurements of the hardmask.
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