Prof. Bogdan Majkusiak Profile

Prof. Bogdan Majkusiak

at Warsaw University of Technology

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Author

Publications (9)

Proceedings Article | 22 December 2016 Paper

Modeling of tunnel field effect transistor: the impact of construction parameters

Piotr Wiśniewski, Bogdan Majkusiak

Proceedings Volume 10175, 101750J (2016) https://doi.org/10.1117/12.2261752

KEYWORDS: Numerical analysis, Silicon, Field effect transistors, Semiconductors, Transistors, Oxides, Process modeling, Molybdenum, Doping, Microelectronics

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Proceedings Article | 22 December 2016 Paper

Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures

Piotr Wiśniewski, Robert Mroczyński, Bogdan Majkusiak

Proceedings Volume 10175, 101750F (2016) https://doi.org/10.1117/12.2261676

KEYWORDS: Reactive ion etching, Silicon, Argon, Etching, Nanoelectronics, Microelectronics, Plasma, Sulfur, Anisotropy, Nanotechnology

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Proceedings Article | 22 December 2016 Paper

Effect of interface traps parameters on admittance characteristics of the MIS (metal-insulator-semiconductor) tunnel structures

Jakub Jasiński, Andrzej Mazurak, Bogdan Majkusiak

Proceedings Volume 10175, 1017508 (2016) https://doi.org/10.1117/12.2261666

KEYWORDS: Interfaces, Semiconductors, Dielectrics, Diodes, Promethium, Hybrid fiber optics, Samarium, Oxides, Hafnium, Capacitance

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Proceedings Article | 22 December 2016 Paper

Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures

D. Tanous, A. Mazurak, B. Majkusiak

Proceedings Volume 10175, 101750H (2016) https://doi.org/10.1117/12.2261816

KEYWORDS: Oxides, Nanocrystals, Thermal weapon sites, Electrodes, Molybdenum, Microelectronics, Capacitance, Telecommunications, Optoelectronics, Modeling

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Proceedings Article | 25 July 2013 Paper

Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS

Andrzej Mazurak, Dominik Tanous, Bogdan Majkusiak

Proceedings Volume 8902, 89020S (2013) https://doi.org/10.1117/12.2031281

KEYWORDS: Molybdenum, Transistors, Semiconductors, Quantum wells, Electrodes, Dielectrics, Silicon, Metals, Oxides, Scattering

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Proceedings Article | 25 July 2013 Paper

Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure

Dominik Tanous, Andrzej Mazurak, Bogdan Majkusiak

Proceedings Volume 8902, 89020R (2013) https://doi.org/10.1117/12.2031279

KEYWORDS: Molybdenum, Silica, Semiconductors, Scattering, Electrodes, Aluminum, Silicon, Diodes, Neodymium, Doping

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Proceedings Article | 25 July 2013 Paper

Description of tunneling through a metal-insulator-metal junction considering Coulomb Blockade

Dominik Tanous, Bogdan Majkusiak

Proceedings Volume 8902, 89020P (2013) https://doi.org/10.1117/12.2031274

KEYWORDS: Electrodes, Electrons, Lawrencium, Metals, Virtual colonoscopy, Dielectrics, Chromium, Diodes, Capacitance, Electroluminescence

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Proceedings Article | 25 July 2013 Paper

Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

Lidia Łukasiak, Bogdan Majkusiak

Proceedings Volume 8902, 89020L (2013) https://doi.org/10.1117/12.2031070

KEYWORDS: Field effect transistors, Oxides, Silicon, Instrument modeling, Process control, Data modeling, Microelectronics, Optoelectronics, Molybdenum, Transistors

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Proceedings Article | 1 August 1992 Paper

Characterization of degradation processes in MOS VLSI structures

Tomasz Brozek, Andrzej Jakubowski, Bogdan Majkusiak

Proceedings Volume 1783, (1992) https://doi.org/10.1117/12.131011

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Showing 5 of 9 publications

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