We report the characteristics of ferroelectric field effect transistor (FeFET) nonvolatile flash memory devices using
aligned P(VDF-TrFE) electrospun nanofibers as the dielectric layer. These FeFET devices showed reliable memory
behaviors and memory window proportional to the quantity of aligned nanofibers containing the ferroelectric β-phase
crystalline domain. Moreover, the FeFET devices using nanofibers exhibited the long-term stability in the data retention
larger than 104 s with the ON/OFF ratio of ~103, and the multiple switching operation stability up to 100 cycles.
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