An Emcore D180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micrometers InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The 1.3 micrometers VCSEL consists of double GaInNAs/GaAs quantum well active region and 1(lambda) cavity with DBRs consisting of alternating layers of GaAs/AlGaAs to obtain a large difference in index of refraction. Wavelengths ranging from 1.275 to 1.31 micrometers have been investigated. The room temperature peak power measured to date is approximately 1 mW, with a slope efficiency of 0.13 mW/mA and a threshold current of 1.5 mA.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.