Quantum dot triple junction solar cells (QD TJSCs) have potential for higher efficiency for space and terrestrial
applications. Extended absorption in the QD layers can increase efficiency by increasing the short circuit current density
of the device, as long as carrier extraction remains efficient and quality of the bulk material remains high. Experimental
studies have been conducted to quantify the carrier extraction probability from quantum confined levels and bulk
material. One studies present insight to the carrier extraction mechanisms from the quantum confined states through the
use of temperature dependent measurements. A second study analyses the loss in carrier collection probability in the
bulk material by investigating the change in minority carrier lifetimes and surface recombination velocity throughout the
device. Recent studies for space applications have shown response from quantum structures to have increased radiation
tolerance. The role strain and bonding strength within the quantum structures play in improving the radiation tolerance
is investigated. The combination of sufficiently good bulk material and device enhancement from the quantum
confinement leads to temperature dependent measurements that show TJSCs outperform baseline TJSCs near and above
60°C. Insight into the physical mechanisms behind this phenomenon is presented.
Radiation tolerance of quantum dot (QD) enhanced solar cells has been measured and modeled. GaAs solar cells
enhanced with 10, 20, 40, 60, and 100X layers of strain compensated QDs are compared to baseline devices without
QDs. Radiation resistance of the QD layers is higher than the bulk material. Increasing the number of QD layers does
not lead to a systematic decrease in QD response throughout the course of radiation exposure. Additionally,
InGaP/(In)GaAs/Ge triple junction solar cells with and without 10 layers of strain compensated QDs in the (In)GaAs
triple junction solar cells are analyzed. Triple junction solar cells with QDs have a better resistance to Voc degradation
but these samples have a degradation in Isc that leads to lower radiation resistance for power output.
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