Fe3Ga4 is an exciting compound since the helical spin structure (HSS) results in a competition between two ground states - one ferromagnetic (FM) and one antiferromagnetic (AFM). Through this ground state competition, there are multiple magnetic transitions of interest, where one is a metamagnetic transition FM to AFM at 70 K, then an AFM to FM transition at 370 K. The HSS in Fe3Ga4 allows for the metallicity to be retained in the AFM state, which makes this compound a candidate for room temperature AFM spintronic applications and the helimagnetism can support topological skyrmion particles similar to MnSi and FeGe. Axis-dependent magnetoresistance and magnetic measurements will be presented that provide information on the exchange interactions of the spins with respect to field and temperature in single crystal Fe3Ga4. Through these results, important insights have been developed that further the understanding of the unique magnetic structure in Fe3Ga4.
We present magnetooptical and transport properties of metamorphic periodic structures containing InAsSb layers with controllable modulated Sb composition [1]. The modulation period is determined by the thicknesses of the strain compensated InAsSbx/InAsSby pairs grown on a virtual AlGaInSb substrate with a lattice constant of 6.25 A. We demonstrate that the bandgap energy of ordered InAsSb0.3/InAsSb0.75 alloy varies from 100mev to a few meV as a result of the well-regulated variation of the modulation period from ∼3 to ∼7.5 nm. The material effective masses and the specific character of the energy spectra will be discussed.
1. G. Belenky, Y. Lin, L. Shterengas, D. Donetsky, G. Kipshidze and S. Suchalkin, Electron. Lett. 51 (19), 1521, (2015)
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