Magnetic tunnel junctions with perpendicular magnetic anisotropy for Magnetic Random Access Memory need to combine high speed and low critical switching current. Higher spin transfer torque (STT) write efficiency is required. This can be achieved introducing a switchable assistance layer, which can be designed to maximize the STT efficiency independently of the switching direction. At the same time, the assistance layer also increases the retention in standby. The reversal process was confirmed with time-resolved measurements. The outlook for scaling to the sub-20 nm diameter range will also be reviewed looking at STT driven switching in perpendicular shape anisotropy cells.
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