Dr. Debdas Pal Profile

Dr. Debdas Pal

at Carnegie Mellon Univ

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Proceedings Article | 17 May 2006 Paper

The promise of quantum-dot infrared photodetectors

E. Towe, D. Pal

Proceedings Volume 6206, 62060K (2006) https://doi.org/10.1117/12.673824

KEYWORDS: Infrared radiation, Quantum well infrared photodetectors, Photodetectors, Infrared detectors, Sensors, Infrared photography, Gallium arsenide, Temperature metrology, Quantum dots, Semiconductors

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Engineered semiconductor quantum structures that enforce carrier confinement in all three spatial dimensions have recently become of interest for potential applications in the sensing of infrared radiation via intersub-level transitions. These structures, most often called quantum dots, may offer a viable alternative to the mercury cadmium telluride semiconductor and GaAs/(Al,Ga)As quantum-well structures for infrared detection. Their major advantages for detection include (i) operation under normal-incidence illumination, (ii) a predicted high responsivity due to a long electron lifetime in the excited states, and (iii) a potential for high-temperature operation. This paper will review the current-state-of-development of (In,Ga)As/GaAs quantum-dot infrared detectors that are sensitive to light in the middle wavelength infrared (3-5 μm) region of the electromagnetic spectrum. The paper will also discuss some of the leading edge experimental results that suggest that quantum-dot active regions may offer a route to elevated device operating temperatures (> 150 K).

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