Despite its superior physical properties, graphene’s optical properties still possess crucial drawbacks for both classical and quantum photonics applications. For example, graphene’s gapless band structure prohibits efficient light emission, while its centrosymmetric nature renders it impossible to obtain strong second-order nonlinearity. In this work, we discuss our latest results on strained graphene that provides a new pathway towards solving the two key above-mentioned problems.
GeSn alloys have emerged as a promising material for realizing CMOS-compatible light sources. GeSn lasers demonstrated to date have large device footprints and active areas, which limit the realization of densely integrated lasers operating at low power consumption. Thanks to their intrinsically small device form factors, 1D photonic crystal lasers may offer opportunities to overcome such limitations of large GeSn lasers. Here, we present a 1D photonic crystal nanobeam laser with a very small device footprint (~7 μm2) and a compact active area (~1.2 μm2) on a GeSn-on-insulator substrate.
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