Due to a big difference between the temperature of the passivation film preparation and the temperature when the device is used, the stress will appear in the layers, and the existence of stress will affect the spectral performance of the InSb infrared detector. SiO2 or SiNx passivation film for the InSb device is prepared at 130°C and is used at 77K, which the stress is seriously affect the device performance due to the mismatch. We simulate the stress between different thickness of SiO2 and SiNx single-layer, SiO2/SiNx double-layer and SiO2/SiNx/SiO2/SiNx multilayer passivation films on the InSb substrate. The bending strain of the SiO2/SiNx double-layer passivation films is the smallest. Combined the formula of infrared transmittance, we get less strain when the single-layer SiO2 thickness is 0.78 μm or the single-layer SiNx thickness is 0.54 μm. When the thicknesses of SiO2 and SiNx are 0.1 μm and 0.42μm respectively for the double-layer passivation film system, the external transmittance is the largest and the strain is smallest.
In the research of the InAs/GaSb type II superlattice, MW/SW、MW/LW、MW/MW two color superlattice infrared focal detector has been developed abroad [1]. In this paper, we study the uniformity, compactness and etching resisrance of the mask prepared by PECVD. It has been proved that dry etching can satisfied the superlattice material etching depth by experiment [2]. When the experimental condition is that the CH4:H2:Cl2:Ar flow ratio is 8:15:6:15, ICP power is 400 W, and the reaction pressure is 1.0 Pa,it can be etched to the requirements of two-color superlattice depth with clear、flat mesa and no residual generation [3]. The experiment optimizes the etching technology of two-color superlattice material, and the etching result meets the requirements of the etching depth and quality of the two-color superlattice chip.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.