GaSb-based interband cascaded lasers (ICLs) have now become a leading laser source to cover the mid-infrared (mid-IR) spectral range (3-6 µm). In the last decade, the success of the silicon photonics industry thanks to its optical properties, low cost and easy commercialization of its large wafers size. However, this requires all Sb-based optoelectronics functions on a Si platform. We will discuss about our recent results on single mode distributed feedback interband cascade lasers (ICL) directly grown on Si emitting between 3 and 4 µm.
The successful development of mid-infrared (2-5µm) lasers monolithically integrated with Si-based photonics opens a door to realization of low-cost smart optical gas sensors for environmental monitoring and control of industrial processes. We will discuss our recent results on interband cascade lasers emitting between 3 and 4 µm grown on silicon substrates demonstrating high tolerance of these devices to threading dislocations. The high performance of the developed lasers makes them a good candidate for use as light sources in silicon photonics.
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