The use of a Tris-(8-hydroxyquinoline) Aluminum (Alq3) organic active region within a distributed Bragg reflector (DBR) mirror-cavity structure is described. The resultant device showed a narrowing of spectral output with increasing DBR usage significantly purifying the broadband emission of Alq3. Higher excitation intensities resulted in the production of lasing with a threshold of 3.2 kW/cm2.
High-power InGaAlP lasers operating at high temperature have been realized by using a strained active layer, a highly doped p-cladding layer, and a long cavity structure. The maximum operating temperature has been increased to 80 degree(s)C for a 50 mW operation of transverse-mode stabilized laser diodes, and also for a 100 mW operation of broad-stripe laser diodes. This improvement in the temperature characteristics has led to a highly reliable operation at a high output power. Transverse-mode stabilized InGaAlP lasers oscillating at 698 nm have exhibited a stable operation for 2,000 hours at a high output power of 40 mW with an ambient temperature of 40 degree(s)C. A highly reliable operation of broad-stripe structure lasers has also been achieved. A stable 100 mW operation for 1,500 hours at a temperature of 50 degree(s)C was obtained for InGaAlP lasers with a stripe width of 25 micrometers .
This paper reviews the recent progress of the 0.6 micrometers wavelength range high power InGaAlP visible light lasers. A fundamental transverse mode cw oscillation was achieved over 40 mW for the transverse mode stabilized structure fabricated by metalorganic chemical vapor deposition. Stable operations over 5000 hours were attained under the condition of 10 mW output power and 40 degree(s)C ambient temperature. High power operation over 80 mW was achieved for a window structure InGaAlP laser which was made in a very unique and simple fabrication process using a bandgap energy change phenomena by the atomic ordering change of this material.
This paper reviews the recent resulis for our transverse-mode stabilized
InGaAltP visibite semiconductor lasers. From the material viewpoint,
InGaA1P/InGaP heterostructure has disadvantages with respect to the laser
operation compared with the GaAlAs/GaAs one. By optimizing the laser
structure, we have developed practical usable InGaAlP visible semiconductor
lasers of relatively low power levels (<5mw). To extena the application
field, though in the development stage, we realized the 670nm high power
operation at more than 20mW and the short wavelength cw operation at 638nm.
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