Laser generated blue light can be exploited in many fields (welding of metals, entertainment, biomedical…). Several of these applications require an autonomous and compact laser source, with emitted power in the order of tens of watts, keeping low cost-per-watt and enabling high-volume production. Present paper reports a new blue laser multi-emitter source, relying on proprietary low-SWaP (Size Weight and Power consumption) architecture, and integrating on the same package the electronics to control, monitor, perform automatic measurements and satisfying safety requirements. The dedicated electronics is designed to drive the high voltage required by the GaN semiconductor diodes connected in series. This integrated electronic multi-emitter demonstrated emitted power of 100 W on 105 μm core fiber, together with a Numerical Aperture (N.A.) of 0.16.
This paper describes the family of blue laser modules developed in Convergent Photonics, relying on a proprietary architecture of spatial and polarization multiplexing and making use of the same platform and assembly lines of similar 9xx nm laser diode multi-emitters. This proprietary technology leads to high emitted power, together with unprecedented - for blue laser sources - low SWaP (Size Weight and Power consumption) and high brightness, suitable for a cost reduction over high volume productions. Present realization is an extremely compact (53 mm × 138 mm × 14.6 mm) laser source, based on a spatial and polarization multiplexing of 20 diodes, with a 114 um core / 125 um cladding multimode fiber output. Prototypes demonstrated power in excess of 100 W at 450 nm, with 95 % of emitted power filling only 0.15 numerical aperture (N.A.).
This paper reports a multi-emitter laser module realization, based on internally developed InGaAs/GaAs 190 μm ridge High Power Diode Lasers (HPDL), emitting at 976 nm. Single diode lasers shown a highly efficient power conversion and good emitted beam characteristics together with excellent long term reliability. The multi-emitter laser module, using 20 diodes polarization and spatially multiplexed, demonstrated up to 350 W of output power at 976 nm; the absence of fiber coupling degradation at high bias currents, thanks to the limited beam blooming from the laser diodes, ensure a good linearity in the operating conditions. The package has a compact footprint of 54 mm x 140 mm, with an output fiber of 200 um core / 220 um cladding, and 95 % of the emitted power is within 0.16 numerical aperture (N.A.). Present realization of high-power multi-emitter semiconductor laser source is suitable for production of high power single modules fiber laser, moreover contributing to an important reduction of the overall fiber laser cost by effectively reducing the number of the pump modules.
This paper reports preliminary performances of a multiemitter diode laser module using ten spatially multiplexed Distributed Bragg Reflector - High Power Diode Laser (DBR-HPDL) chip, emitting 100 W CW in the 920 nm range, with 95 % of power in 0.17 N.A., on a 135 um core / 155 um cladding multimode fiber, and stabilized spectrum width of only 0.6 nm.
Diode chip implemented an integrated multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths using a manufacturable, reliable and high yield technology. Up to three pitches, DBR-HPDLs 2.5 nm spaced have been demonstrated on same wafer with excellent uniformity of performances across the wafer and emitted wavelengths.
Since the absence of any wavelength locking optical element in the collimated beam path, multiemitter module of DBRHPDL was assembled and tested in the production line using standard assembly process flow and without requiring any special alignment, as maturity demonstration of the proposed technology for mass production of wavelength stabilized high-power laser modules.
KEYWORDS: Semiconducting wafers, High power lasers, Semiconductor lasers, Diodes, Optics manufacturing, Manufacturing, Electron beam lithography, Reflectivity, Wafer-level optics, High power diode lasers
This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 14W CW in the 920nm range. Key feature is the use of a multiple-order Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. In present paper, on the same wafer, three pitches DBR-HPDLs 2.5nm spaced have been demonstrated with excellent characteristics of power, spectral purity and stability. Moreover, excellent uniformity of performances across the wafer with different emitted wavelengths demonstrates the maturity of proposed technology for high yield, high volume laser diode production for wavelength stabilized applications.
This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 10W in the 920 nm range. High spectral purity (90% power in about 0.5 nm), and wavelength stability versus injected current (about 5 times more than standard FP laser) candidates DBR-HPDL as a suitable device for wavelength stabilized pump source, and high brightness applications exploiting Wavelength Division Multiplexing. Key design aspect is a multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. Present paper shows preliminary demonstration of wafer with 3 pitches, generating DBRHPDLs 2.5 nm spaced.
The optimization of a 1300nm buried heterostructure(BH)InGaAsP/InP DFB laser for uncooled directly modulated 10Gbit/s operation is described. The development process as well as the key process parameters are discussed and results are presented on an optimized structure. Bandwidths in excess of 10GHz were measured at 90C chip base temperature. Clean open eye diagrams were recorded over the full temperature range, resulting in error free transmission over 40km. To our knowledge the results represent the current state of the art for uncooled BH DFB lasers operating at 1300nm.
KEYWORDS: Monte Carlo methods, Silicon, Gold, Electron beam lithography, Optical simulations, Scattering, Chemically amplified resists, Polymethylmethacrylate, Electron beams, Diffusion
A fast simulator for electron beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. This method has been proved much faster than Monte Carlo. All important phenomena are included in the calculation. Additionally, the reaction/diffusion effects occurring during post exposure bake in the case of chemically amplified resists are taken into account. The result obtained by the simulation are compared successfully with experimental and other simulation results for conventional and chemically amplified resists. The case of substrates consisting of more than one layer is considered in depth as being of great importance in electron beam patterning. By using SELID, it is possible to forecast the resist profile with considerable accuracy for a wide range of resists, substrates and energies. Additionally, proximity effect parameters are extracted easily for use in any proximity correction package.
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